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* DC Current Gain -- hFE = 20 - 70 @ IC = 4.0 Adc * Collector-Emitter Saturation Voltage -- VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc * Excellent Safe Operating Area . . . designed for general-purpose switching and amplifier applications.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
hFE , DC CURRENT GAIN
Complementary Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25_C Derate above 25_C
Base Current
Collector Current -- Continuous
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Characteristic
Rating
1000
100
10 0.1
0.2
Symbol
Symbol
TJ, Tstg
VCEO
VCER
RJC
RJA
VCB
VEB
0.5 0.7 1.0 0.3 2.0 3.0 IC, COLLECTOR CURRENT (AMP)
PD
IC
Figure 1. DC Current Gain
IB
- 65 to + 150
Value
35.7
1.39
Max
90 0.72
100
7.0
15
7.0
70
60
VCE = 4.0 V TJ = 25C
Watts W/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_C
5.0 7.0
TIP3055 TIP2955
10
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS
TIP3055 PNP TIP2955
CASE 340D-01
Order this document by TIP3055/D
NPN
1
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TIP3055 TIP2955
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
SECOND BREAKDOWN
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS
Small-Signal Current Gain (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
Current Gain -- Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Second Breakdown Collector Current with Base Forward Biased (VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)
Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc)
DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc)
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector Cutoff Current (VCE = 70 Vdc, RBE = 100 Ohms)
Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0)
2
100 0.1 1.0 0.5 0.3 0.2 IC, COLLECTOR CURRENT (AMPS) 5.0 3.0 2.0 1.0 10 50 30 20
Figure 2. Maximum Rated Forward Bias Safe Operating Area
2.0 4.0 6.0 10 20 40 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 150C
SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C
dc
Characteristic
1.0 ms
v
10 ms
300 s
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature.
Motorola Bipolar Power Transistor Device Data
VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICER ICEV hFE Is/b hfe fT Min 2.5 3.0 60 -- -- -- -- -- -- -- 20 5.0 15 Max 1.8 1.1 3.0 5.0 5.0 0.7 1.0 70 -- -- -- -- -- mAdc mAdc mAdc mAdc MHz Unit Adc Vdc Vdc Vdc -- kHz
TIP3055 TIP2955
PACKAGE DIMENSIONS
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078
U S K L
1 2
4
A
3
DIM A B C D E G H J K L Q S U V
D V G
J H
STYLE 1: PIN 1. 2. 3. 4.
CASE 340D-01 ISSUE A
Motorola Bipolar Power Transistor Device Data
3
TIP3055 TIP2955
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4
Motorola Bipolar Power Transistor Device Data
*TIP3055/D*
TIP3055/D

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